Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-Film Transistors Due to Mobile Sodium
نویسندگان
چکیده
منابع مشابه
Current stress instability analysis of amorphous InGaZnO thin film transistors
1. Introduction Recent researches from the demands of large size liquid crystal flat panel displays, low cost process and higher performance arouse great interest on amorphous oxide semiconductor based thin-film transistors (TFTs) as an alternative of a-Si TFTs. To achieve device reliability and stability under various current/voltage bias, temperature, and light injections, various researches ...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2016
ISSN: 2168-6734
DOI: 10.1109/jeds.2016.2562675